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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11646369 B1

PDFFull Text
Date of Patent:
May. 09, 2023

Filed:

Mar. 16, 2021

Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yuichi Nagahisa, Tokyo, JP;

Shiro Hino, Tokyo, JP;

Koji Sadamatsu, Tokyo, JP;

Hideyuki Hatta, Tokyo, JP;

Kotaro Kawahara, Tokyo, JP;

Assignee:

MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;

Attorney:

Xsensus LLP

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01); H02M 7/5387 (2007.01); H01L 29/06 (2006.01); H01L 27/06 (2006.01); H02P 27/08 (2006.01); H01L 29/872 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7806 (2013.01); H01L 21/8234 (2013.01); H01L 27/06 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/41741 (2013.01); H01L 29/47 (2013.01); H01L 29/7804 (2013.01); H01L 29/7811 (2013.01); H02M 7/53871 (2013.01); H01L 29/872 (2013.01); H02P 27/08 (2013.01);
Abstract

In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce a breakdown voltage. In the SiC-MOSFET with the built-in Schottky diode, a conductive layer in Schottky connection with the second well region is provided on the second well region in the terminal part, and the conductive layer is electrically connected with a source electrode of the MOSFET. A conductive layer contact hole is provided for connecting only the conductive layer and the source electrode.

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