The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Jan. 23, 2019
Infineon Technologies Bipolar Gmbh & Co. Kg., Warstein, DE;
Uwe Kellner-Werdehausen, Leutenbach, DE;
Michael Stelte, Borchen-Etteln, DE;
Markus Droldner, Ahlen, DE;
Dirk Pikorz, Warstein, DE;
Peter Weidner, Soest, DE;
Reiner Barthelmess, Soest, DE;
Mario Schenk, Warstein, DE;
Jens Przybilla, Warstein, DE;
Infineon Technologies Bipolar GmbH & Co. KG., Warstein, DE;
Abstract
A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.