The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Dec. 27, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Yu-Ping Chen, New Taipei, TW;
Chun-Shun Huang, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device structure includes a substrate, a first gate structure, a second gate structure, a first well region, and a first structure. The substrate has a first surface and a second surface opposite to the first surface. The first gate structure is disposed on the first surface. The second gate structure is disposed on the first surface. The first well region is in the substrate and between the first gate structure and the second gate structure. The first structure is disposed in the first well region. A shape of the first structure has an acute angle.