The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Oct. 06, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yoshifumi Zaizen, Kanagawa, JP;

Shunsuke Maruyama, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01); A61B 1/04 (2006.01); B60W 50/00 (2006.01); H04N 5/33 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1465 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/14694 (2013.01); H01L 31/03046 (2013.01); H01L 31/109 (2013.01); H01L 31/1844 (2013.01); A61B 1/041 (2013.01); B60W 50/00 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H04N 5/33 (2013.01);
Abstract

A light-receiving device of an embodiment of the present disclosure includes a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region, a first semiconductor layer formed on the photoelectric conversion layer, and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.


Find Patent Forward Citations

Loading…