The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Jan. 22, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Wookyung You, Hwaseong-si, KR;
Kyeongbeom Park, Hwaseong-si, KR;
Sungbin Park, Suwon-si, KR;
Suhyun Park, Suwon-si, KR;
Jongmin Baek, Seoul, KR;
Jangho Lee, Incheon, KR;
Seonghun Lim, Hwaseong-si, KR;
Deokyoung Jung, Seoul, KR;
Kyuhee Han, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first insulating layer disposed on a substrate, a first wiring disposed in the first insulating layer, a first insulating barrier layer disposed on the first insulating layer, an etch-stop layer disposed on the first insulating barrier layer and having an area smaller than an area of the first insulating barrier layer in a plan view, a resistive metal pattern disposed on the etch-stop layer, a second insulating barrier layer disposed on the resistive metal pattern, a second insulating layer covering the first and second insulating barrier layers, a second wiring disposed in the second insulating layer, and a first conductive via disposed between the resistive metal pattern and the second wiring to penetrate through the second insulating barrier layer and the second insulating layer and electrically connect the resistive metal pattern and the second wiring.