The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Mar. 18, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Dong Kil Yim, Santa Maria, CA (US);

Jose-Ignacio Del-Agua Borniquel, Bertem, BE;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8254 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8254 (2013.01); H01L 29/22 (2013.01); H01L 29/66742 (2013.01); H01L 29/78663 (2013.01);
Abstract

In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein the first layer comprises one or more metal oxides of indium (In), gallium (Ga), zinc (Zn), tin (Sn) or combinations thereof.


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