The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Feb. 03, 2021
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Jean-Pierre Colinge, Grenoble, FR;
Abstract
A method for manufacturing a structured substrate provided with a trap-rich layer whereon rests a stack consisting of an insulating layer and of a layer of single-crystal material, includes forming an amorphous silicon layer on a front face of a silicon substrate and heat treating intended to convert the amorphous silicon layer into a trap-rich layer made of single-crystal silicon grains. The heat treatment conditions in terms of duration and of temperature are adjusted to limit the grains to a size less than 200 nm. The method also includes overlapping the trap-rich layer with an insulating layer and a layer of single-crystal material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile