The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Feb. 23, 2022
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Masakazu Watanabe, Toyota, JP;
Shuhei Eguchi, Toyota, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/38 (2006.01); H01L 21/385 (2006.01); H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
H01L 21/385 (2013.01); H01L 21/477 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming an organosilicon compound layer on a surface of an oxide semiconductor substrate, heating the oxide semiconductor substrate provided with the organosilicon compound layer at a first temperature to form a silicon diffusion layer inside the oxide semiconductor substrate, and removing the organosilicon compound layer from the surface of the oxide semiconductor substrate after heating the oxide semiconductor substrate at the first temperature.