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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11646203 B1

PDFFull Text
Date of Patent:
May. 09, 2023

Filed:

Jul. 10, 2020

Thin film formation apparatus and method using plasma

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junyeong Lee, Seoul, KR;

Minkyu Park, Seoul, KR;

Insun Yi, Seoul, KR;

Beomseok Kim, Seoul, KR;

Youngseok Kim, Seoul, KR;

Kuntack Lee, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Volentine, Whitt & Francos, PLLC

Primary Examiner:

Dale E Page

Assistant Examiner:

Quovaunda Jefferson

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2017.01); H01J 37/32 (2006.01); C23C 16/511 (2006.01); C23C 16/46 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/401 (2013.01); C23C 16/46 (2013.01); C23C 16/511 (2013.01); H01J 37/3244 (2013.01); H01J 37/32192 (2013.01); H01J 37/32724 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 27/10888 (2013.01); H01L 27/115 (2013.01); H01L 29/6681 (2013.01); H01J 2237/332 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02598 (2013.01);
Abstract

A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H) and deuterium (D).

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