The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Oct. 11, 2019
Applicants:

Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yanwu Chen, Beijing, CN;

Bo Xu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/34 (2006.01); H02M 1/14 (2006.01); H02M 7/483 (2007.01); H03M 1/46 (2006.01); G03B 21/20 (2006.01); H05B 45/3725 (2020.01); H02M 1/44 (2007.01); H02M 3/157 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3406 (2013.01); H02M 1/14 (2013.01); H02M 1/44 (2013.01); H02M 3/157 (2013.01); H02M 3/158 (2013.01); H05B 45/3725 (2020.01); G09G 2320/0626 (2013.01); G09G 2330/02 (2013.01);
Abstract

The embodiments of the present application disclose a booster circuit and a driving method thereof, a backlight module and a display device. The booster circuit includes: a booster sub-circuit and an oscillation elimination sub-circuit; wherein the booster sub-circuit includes a power supply element, an inductor, and a first switch; the booster sub-circuit is configured to provide, at a connection node, a voltage higher than a voltage provided from the power supply element; and wherein a parasitic capacitance occurs between the connection node and a ground terminal; the oscillation elimination sub-circuit is configured to prevent a current generated when the parasitic capacitance discharges from flowing through the inductor so as to eliminate an oscillation generated between the parasitic capacitance and the inductor.


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