The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Jul. 05, 2019
Applicant:

Element Six Technologies Limited, Didcot, GB;

Inventors:

Ian Friel, Didcot, GB;

Katharine Louise Atkinson, Didcot, GB;

Daniel James Twitchen, Didcot, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C30B 25/20 (2006.01); C30B 25/10 (2006.01); C30B 29/04 (2006.01);
U.S. Cl.
CPC ...
C30B 25/205 (2013.01); C30B 25/105 (2013.01); C30B 25/16 (2013.01); C30B 29/04 (2013.01);
Abstract

A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 10cm. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.


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