The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Jun. 14, 2021
Applicant:
Industry-university Cooperation Foundation Hanyang University Erica Campus, Ansan-si, KR;
Inventors:
Jung-Ho Lee, Ansan-si, KR;
Jin-Young Jung, Ansan-si, KR;
Dong-Hyung Kim, Ansan-si, KR;
Sung-Hae Kim, Ansan-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 9/50 (2021.01); C25B 1/04 (2021.01); C25B 9/65 (2021.01); C25B 11/053 (2021.01); C25B 11/091 (2021.01); C25B 11/059 (2021.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/02 (2006.01); H10N 10/17 (2023.01);
U.S. Cl.
CPC ...
C25B 9/50 (2021.01); C23C 16/0272 (2013.01); C23C 16/405 (2013.01); C23C 16/45555 (2013.01); C25B 1/04 (2013.01); C25B 9/65 (2021.01); C25B 11/053 (2021.01); C25B 11/059 (2021.01); C25B 11/091 (2021.01); H10N 10/17 (2023.02);
Abstract
Provided is a photocathode structure including: a photocathode including silicon (Si); an intermediate layer formed on the photocathode, and including a silicon oxide (SiO); and a protective layer foiled on the intermediate layer, and including a metal oxide, wherein the intermediate layer is a tunneling barrier configured to transfer charges from the photocathode to the protective layer by an electric field applied from an outside.