The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Nov. 15, 2019
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Inventor:
Yongwei Wu, Shenzhen, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 18/12 (2006.01); C08J 5/18 (2006.01); C09K 11/08 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
C23C 18/1295 (2013.01); C08J 5/18 (2013.01); C09K 11/0816 (2013.01); C09K 11/0833 (2013.01); C23C 18/1204 (2013.01); C23C 18/125 (2013.01); H01L 51/5056 (2013.01); C08J 2300/10 (2013.01); H01L 2251/303 (2013.01);
Abstract
A perovskite film, method of preparing thereof, and an optoelectronic device are provided. They are prepared by steps including preparing a mixture containing a first monomer and a second monomer which can be crosslinked in situ; performing an annealing process, and the first monomer and the second monomer are reacted in situ to form a first polymer which combines with the perovskite crystal grains formed by the perovskite precursor and is concentrated at a crystal grain boundary of the perovskite crystal grains to passivate the perovskite crystal grain defects, and then a perovskite film is formed by curing.