The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2023

Filed:

May. 28, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Gae Hwang Lee, Seongnam-si, KR;

Sung Young Yun, Suwon-si, KR;

Yong Wan Jin, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 51/42 (2006.01); H01L 51/44 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 51/4253 (2013.01); H01L 51/441 (2013.01); H01L 51/006 (2013.01); H01L 51/0046 (2013.01); H01L 51/0053 (2013.01); H01L 51/0061 (2013.01); H01L 51/0062 (2013.01); Y02E 10/549 (2013.01);
Abstract

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p/n) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p/n) and the second composition ratio (p/n).


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