The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Apr. 18, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Szu-Yao Chang, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/14 (2006.01); G11C 11/402 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 12/37 (2023.02); G11C 8/14 (2013.01); G11C 11/4023 (2013.01); H01L 28/40 (2013.01); H10B 12/038 (2023.02);
Abstract
A method of forming a semiconductor structure includes forming a capacitor on a substrate. A recess is formed in the capacitor. A drain region is formed in the recess. A word line is formed on the drain region. A gate structure is formed on the drain region, and the gate structure is electrically connected to the word line. A first bit line is formed on the gate structure, such that the first bit line servers as a source region.