The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
May. 24, 2021
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Yi-Lun Chou, Hsinchu, TW;
Chih-Hao Chen, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 21/78 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/36 (2010.01); H01L 33/24 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/78 (2013.01); H01L 31/1876 (2013.01); H01L 33/0075 (2013.01); H01L 33/24 (2013.01); H01L 33/36 (2013.01); H01L 33/40 (2013.01); H01L 33/44 (2013.01);
Abstract
A method of manufacturing a light-emitting element includes: providing a substrate, wherein the substrate includes a top surface with a first area and a second area; introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer includes a first crystal quality and the second layer includes a second crystal quality, the first crystal quality is different from the second crystal quality; and dicing the substrate along the second area.