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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11640960 B1

PDFFull Text
Date of Patent:
May. 02, 2023

Filed:

Jun. 10, 2021

Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor

Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Timothy E. Boles, Tynsboro, MA (US);

Wayne Mack Struble, Franklin, MA (US);

Assignee:

MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);

Attorneys:

Perilla Knox & Hildebrandt LLP

Jason M. Perilla

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0605 (2013.01); H01L 21/02389 (2013.01); H01L 21/76264 (2013.01); H01L 23/66 (2013.01); H01L 27/0629 (2013.01); H01L 27/1207 (2013.01); H01L 21/762 (2013.01);
Abstract

A number of integrated circuits and methods of manufacturing the integrated circuits are described. An integrated circuit can include different semiconductor devices formed from different semiconductor systems in different regions over the same substrate. The integrated circuit can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.

Find Patent Forward Citations

Boles, Timothy. (2023). Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor (U.S. Patent No. 11640960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11640960

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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