The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2023

Filed:

Sep. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jung-A Lee, Suwon-si, KR;

Yeon Sook Kim, Hwaseong-si, KR;

Han Byul Jang, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2223/54493 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor wafer includes a wafer body including an active layer having a first crystal orientation and having first and second surfaces opposing each other, and a support layer having a second crystal orientation different from the first crystal orientation and having third and fourth surfaces opposing each other, a bevel portion that extends along an outer periphery of the wafer body to connect the first surface to the fourth surface, and a notch portion formed at a predetermined depth in a direction from the outer periphery of the wafer body toward a center portion of the wafer body. The bevel portion includes a first beveled surface connected to the first surface and a second beveled surface connected to the fourth surface. The first beveled surface has a width in a radial direction of the wafer body that is 300 μm or less.


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