The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2023

Filed:

Oct. 14, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong-Gu Kim, Cheonan-si, KR;

Homin Son, Seoul, KR;

Junghyeon Kim, Yongin-si, KR;

Hangkyu Song, Hwaseong-si, KR;

Eunha Oh, Suwon-si, KR;

Oleg Feygenson, Hwaseong-si, KR;

Donghyun Jang, Incheon, KR;

Sung-Woo Jeon, Hwaseong-si, KR;

Wooyeon Hwang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 16/46 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/448 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
C23C 16/46 (2013.01); C23C 16/448 (2013.01); C23C 16/45502 (2013.01); H01L 21/0228 (2013.01); C23C 16/458 (2013.01);
Abstract

An apparatus for depositing a thin layer and associated method, the apparatus including a process chamber; a support in the process chamber, substrates being supportable on the support at different heights; a gas injector configured to inject a gas into the process chamber; and a heater configured to heat the process chamber, wherein the gas injector includes a first injector configured to inject a first gas; and a second injector configured to inject a second gas, a flow rate of the first gas injected from the first injector ranges from 120 sccm to 240 sccm, and a flow rate of the second gas injected from the second injector ranges from 1,200 sccm to 2,400 sccm.


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