The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Jan. 10, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Eunsub Shim, Hwaseong-si, KR;

Jungchak Ahn, Yongin-si, KR;

Kyungho Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/3745 (2011.01); H04N 5/355 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H04N 5/37452 (2013.01); H04N 5/3559 (2013.01); H04N 5/378 (2013.01);
Abstract

An image sensor includes a pixel array having a plurality of pixels; a row driver providing the pixel array with a boosting signal; and a read-out circuit configured to read out pixel signals output from pixels of a row line selected by the row driver. Each of the plurality of pixels includes: a first photodiode; a transmission transistor connected to the first photodiode; a first floating diffusion node, a second floating diffusion node, and a third floating diffusion node, which are connected to the transmission transistor to accumulate charges generated by the first photodiode; an LCG capacitor connected to the third floating diffusion node to accumulate the charges generated by the first photodiode; an MCG transistor connected between the first floating diffusion node and the second floating diffusion node; and an LCG transistor connected to the third floating diffusion node.


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