The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Feb. 26, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyungho Lee, Suwon-si, KR;
Eunsub Shim, Hwaseong-si, KR;
Jungbin Yun, Hwaseong-si, KR;
Sungsoo Choi, Hwaseong-si, KR;
Masato Fujita, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.