The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Jun. 21, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Marco Flaibani, Montegrotto Terme, IT;

Davide Dal Bianco, Schio, IT;

Giuseppe Loccia, Maenza, IT;

Tommaso Pieretti, Padua, IT;

Winand Van Sloten, Padua, IT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02M 1/00 (2006.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H02M 1/0025 (2021.05); H02M 1/08 (2013.01); H02M 3/158 (2013.01); H02M 1/0032 (2021.05);
Abstract

In some examples, a device for controlling a transistor in a power converter system includes a first circuit configured to generate an error current based on a difference between a reference signal and a feedback signal, where the feedback signal depends on an output voltage of the power converter system. The device also includes a frequency generator configured to generate an activation signal based on the difference between the reference signal and the feedback signal. The device further includes a pedestal circuit configured to define a peak current threshold for the transistor based on an offset value. The device also includes a logic circuit configured to activate the transistor based on the activation signal and deactivate the transistor when a current sense signal reaches the defined peak current threshold, where the current sense signal is representative of a power current conducted by the transistor.


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