The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Feb. 01, 2019
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Tomoyuki Sasaki, Tokyo, JP;

Atsushi Tsumita, Tokyo, JP;

Yohei Shiokawa, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/04 (2006.01); H01L 27/22 (2006.01); H01L 43/06 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); H01L 27/228 (2013.01); H01L 43/065 (2013.01);
Abstract

A spin-orbit torque magnetoresistance effect element according to the present embodiment includes an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, and a gate part positioned between the first conductive part and the second conductive part when viewed from the first direction, facing a second surface of the spin-orbit torque wiring on a side opposite to a first surface which faces the element part, and including a gate insulating layer and a gate electrode in order from a position near the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a semiconductor to which a scattering element is added.


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