The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Jan. 18, 2022
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Keiji Okumura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 29/36 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/0274 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract

A semiconductor device, including a first semiconductor layer of the first conductivity type formed on a semiconductor substrate, a first semiconductor region of the first conductivity type, a first base region and a first base region, both of a second conductivity type, selectively provided in the first semiconductor layer, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer, a second semiconductor region of the first conductivity type selectively provided in the second semiconductor layer, a trench penetrating the second semiconductor layer and the second semiconductor region, a gate electrode provided in the trench, an interlayer insulating film provided on the gate electrode, a second base region in contact with a bottom of the trench, a first electrode in contact with the second semiconductor layer and the second semiconductor region, and a second electrode provided on the back of the semiconductor substrate.


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Okumura, Keiji. (2023). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 11637199). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11637199

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