The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Sep. 16, 2019
Zhongshan Institute of Modern Industrial Technology, South China University of Technology, Guangdong, CN;
South China University of Technology, Guangdong, CN;
Hong Wang, Guangdong, CN;
Quanbin Zhou, Guangdong, CN;
ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangdong, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangdong, CN;
Abstract
An epitaxial structure of a GaN-based radio frequency device based on a Si substrate and a manufacturing method thereof are provided. The epitaxial structure is composed of a Si substrate (), an AlN nucleation layer (), AlGaN buffer layers (), a GaN:Fe/GaN high-resistance layer (), a GaN superlattice layer (), a GaN channel layer (), an AlGaN barrier layer () and a GaN cap layer () which are stacked in turn from bottom to top, wherein the GaN:Fe/GaN high-resistance layer () is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately connected; the GaN superlattice layer () is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected.