The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Jun. 23, 2021
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Kun Sik Park, Daejeon, KR;
Jong Il Won, Daejeon, KR;
Doo Hyung Cho, Daejeon, KR;
Hyun Gyu Jang, Daejeon, KR;
Dong Yun Jung, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/749 (2006.01); H01L 29/745 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66378 (2013.01); H01L 29/749 (2013.01); H01L 29/7455 (2013.01);
Abstract
The present invention forms an off-FET channel having a uniform and short length by using a self-align process of a method of forming and recessing a spacer, thereby enhancing the current driving capability of an off-FET and the uniformity of a device operation.