The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Aug. 10, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Atsushi Fukumoto, Kuwana, JP;

Keisuke Suda, Yokkaichi, JP;

Takayuki Ito, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/11582 (2017.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/311 (2013.01); H01L 21/32133 (2013.01);
Abstract

A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.


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