The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Jun. 29, 2021
Applicants:

Quantum Silicon Inc., Edmonton, CA;

National Research Council of Canada, Ottawa, CA;

The University of British Columbia, Vancouver, CA;

Inventors:

Robert Wolkow, Edmonton, CA;

Mohammad Rashidi, Edmonton, CA;

Wyatt Vine, Edmonton, CA;

Thomas Dienel, Edmonton, CA;

Lucian Livadaru, Edmonton, CA;

Taleana Huff, Edmonton, CA;

Jacob Retallick, Edmonton, CA;

Konrad Walus, Edmonton, CA;

Jason Pitters, Ottawa, CA;

Roshan Achal, Edmonton, CA;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01Q 80/00 (2010.01); G01Q 30/10 (2010.01); G01Q 60/10 (2010.01); G01Q 60/24 (2010.01); G01Q 70/14 (2010.01); G06N 3/00 (2006.01); G06N 3/04 (2023.01); G06N 3/08 (2023.01);
U.S. Cl.
CPC ...
G01Q 80/00 (2013.01); G01Q 30/10 (2013.01); G01Q 60/10 (2013.01); G01Q 60/24 (2013.01); G01Q 70/14 (2013.01); G06N 3/04 (2013.01); G06N 3/08 (2013.01);
Abstract

A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.


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