The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2023
Filed:
Nov. 19, 2021
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 15/02 (2006.01); C30B 35/00 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/02 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01); C30B 35/00 (2013.01);
Abstract
A production method of monocrystalline silicon includes: measuring an emissivity of an inner wall surface of a top chamber; and determining a target resistivity of monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon. In determining the target emissivity on a crystal center axis at a position for starting formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is 0.4 or less, the target resistivity is determined to be less than a resistivity value of 3.0 mΩ·cm when the dopant is arsenic.