The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Jan. 30, 2020
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;

Inventors:

Eunsung Lee, Hwaseong-si, KR;

Duseop Yoon, Seongnam-si, KR;

Joungeun Yoo, Seongnam-si, KR;

Dohyang Kim, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 21/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
C22C 21/02 (2013.01); H01L 45/06 (2013.01); H01L 45/14 (2013.01); C22C 2200/06 (2013.01);
Abstract

A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.


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