The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

Sep. 20, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chad Andrew Marquart, Austin, TX (US);

Glen A. Wiedemeier, Austin, TX (US);

Daniel M. Dreps, Georgetown, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H03K 5/08 (2006.01); H04L 25/02 (2006.01); H03K 19/003 (2006.01); H03K 19/0944 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 5/08 (2013.01); H03K 17/687 (2013.01); H03K 19/00315 (2013.01); H03K 19/0944 (2013.01); H04L 25/0264 (2013.01);
Abstract

A high-speed voltage clamping circuit includes p-type field effect transistor (PFET) biasing circuit, an n-type field effect transistor (NFET) biasing circuit, and a field effect transistor (FET) clamp circuit. The PFET biasing circuit is configured to generate a PFET biasing voltage. The NFET biasing circuit is configured to generate a NFET biasing voltage. The FET clamp circuit is in signal communication with the PFET biasing circuit and the NFET biasing circuit. The PFET biasing circuit controls operation of the clamping circuit in response to a voltage overshoot event and the NFET biasing circuit controls operation of the clamping circuit in response to a voltage undershoot event.


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