The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

Mar. 24, 2021
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Timothy Donald Gathman, San Diego, CA (US);

Lai Kan Leung, San Marcos, CA (US);

Chirag Dipak Patel, San Diego, CA (US);

Xinmin Yu, San Diego, CA (US);

Rajagopalan Rangarajan, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 11/22 (2006.01); H03H 11/04 (2006.01);
U.S. Cl.
CPC ...
H03H 11/22 (2013.01); H03H 2011/0494 (2013.01);
Abstract

An example apparatus includes a polyphase transconductance-capacitor filter. The polyphase filter includes a DC bias voltage node, a plus in-phase filter unit, a minus in-phase filter unit, a plus quadrature-phase filter unit, and a minus quadrature-phase filter unit. Each filter unit respectively includes an input node, an output node, and a control node. The polyphase filter also includes a plus in-phase switch and a minus in-phase switch. The plus in-phase switch is coupled to the control node of the plus in-phase filter unit, the DC bias voltage node, and the input node of one or both of the plus quadrature-phase filter unit and the minus quadrature-phase filter unit. The minus in-phase switch is coupled to the control node of the minus in-phase filter unit, the DC bias voltage node, and the input node of one or both of the plus quadrature-phase filter unit and the minus quadrature-phase filter unit.


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