The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
May. 17, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Geunwoo Kim, Seoul, KR;
Wandon Kim, Seongnam-si, KR;
Heonbok Lee, Suwon-si, KR;
Yoontae Hwang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes: a fin-type active region extending on a substrate in a first direction; a gate structure extending across the fin-type active region in a second direction, different from the first direction; a source/drain region in the fin-type active region on one side of the gate structure; and first and second contact structures connected to the source/drain region and the gate structure, respectively, wherein at least one of the first and second contact structures includes a seeding layer on at least one of the gate structure and the source/drain region and including a first crystalline metal, and a contact plug on the seeding layer and including a second crystalline metal different from the first crystalline metal, and the second crystalline metal is substantially lattice-matched to the first crystalline metal at an interface between the seeding layer and the contact plug.