The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
May. 10, 2021
Semiq Incorporated, Lake Forest, CA (US);
Rahul R. Potera, Irvine, CA (US);
SEMIQ INCORPORATED, Lake Forest, CA (US);
Abstract
A silicon carbide planar MOSFET includes a junction field-effect transistor (JFET) region that extends up to a top planar surface of the substrate. The JFET region includes a central area, which comprises a portion of the drift region that extends vertically to the top planar surface. First and second sidewall areas are disposed on opposite sides of the central area. The central area has a first lateral width and a first doping concentration. The first and second sidewall areas extend vertically to the top planar surface, with each having a second lateral width. The first and second sidewall areas each have a second doping concentration that is greater than the first doping concentration such that, at a zero bias condition, first and second depletion regions respectively extend only within the first and second sidewall areas of the JFET region.