The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

Sep. 03, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Naoya Yoshimura, Kuwana Mie, JP;

Keisuke Nakatsuka, Kobe Hyogo, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); G11C 16/04 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11519 (2013.01); H01L 27/11565 (2013.01); G11C 16/0483 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor storage device includes first conductive layers stacked in a first direction and extend in a second direction; second conductive layers stacked in the first direction and extend in the second direction; third conductive layers that are electrically connected to the first conductive layers and the second conductive layers and stacked in the first direction; a first insulating layer and a second insulating layer sandwich the first conductive layer; a third insulating layer and a fourth insulating layer sandwich the second conductive layer; first pillars arranged in the second direction in the first insulating layer with a first distance; and second pillars arranged in the second direction in the second insulating layer with the first distance. Each of the second pillars is displaced from a corresponding one of the first pillars by a second distance that is shorter than a half of the first distance in the second direction.


Find Patent Forward Citations

Yoshimura, Naoya. (2023). Semiconductor storage device (U.S. Patent No. 11631683). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11631683

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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