The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

Apr. 23, 2020
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Jian-Hsing Lee, Puzih, TW;

Yeh-Jen Huang, Hsinchu, TW;

Wen-Hsin Lin, Jhubei, TW;

Chun-Jung Chiu, Tainan, TW;

Hwa-Chyi Chiou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 27/027 (2013.01); H01L 27/0255 (2013.01); H01L 29/20 (2013.01); H01L 29/7787 (2013.01);
Abstract

A control circuit applied in a specific element and including a first transistor and an electrostatic discharge (ESD) protection circuit is provided. The specific element has a III-V semiconductor material and includes a control electrode, a first electrode and a second electrode. The first transistor is coupled between the first electrode and the second electrode and has the III-V semiconductor material. The ESD protection circuit is coupled to the control electrode, the first transistor and the second electrode. In response to an ESD event, the ESD protection circuit provides a discharge path to release the ESD current from the control electrode to the second electrode.


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