The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Jul. 08, 2021
Applicant:
Key Foundry Co., Ltd., Cheongju-si, KR;
Inventors:
Young Bae Kim, Cheongju-si, KR;
Kwang Il Kim, Cheongju-si, KR;
Assignee:
KEY FOUNDRY CO., LTD., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823493 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/823418 (2013.01); H01L 27/088 (2013.01); H01L 29/0634 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/0886 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/063 (2013.01);
Abstract
Provided are a semiconductor device, a method of manufacturing the same, and a method of forming a uniform doping concentration of each semiconductor device when manufacturing a plurality of semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable by using ion blocking patterns to provide a semiconductor device with uniform doping concentration and a higher breakdown voltage obtainable as a result of such doping.