The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

May. 06, 2022
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Stephan Lutgen, Dresden, DE;

Thomas Lauermann, Berlin, DE;

Assignee:

META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 21/20 (2006.01); H01L 33/02 (2010.01); H01L 27/15 (2006.01); G02B 27/01 (2006.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 21/2007 (2013.01); G02B 27/0172 (2013.01); H01L 27/156 (2013.01); H01L 33/0062 (2013.01); H01L 33/0066 (2013.01); H01L 33/0093 (2020.05); H01L 33/025 (2013.01); H01L 33/32 (2013.01); H01L 33/502 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); G02B 2027/0116 (2013.01); G02B 2027/0178 (2013.01); H01L 2224/4852 (2013.01);
Abstract

Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component including a semiconductor layer stack is hybrid bonded to a second component including a substrate that has a different thermal expansion coefficient than the semiconductor layer stack. The semiconductor layer stack includes an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The first component and the second component further include first contacts and second contacts, respectively. To hybrid bond the two components, the first contacts are aligned with the second contacts. Then dielectric bonding is performed to bond respective dielectric materials of both components. The dielectric bonding is followed by metal bonding of the contacts, using annealing. To compensate run-out between the first contacts and the second contacts, aspects of the present disclosure relate to changing a curvature of the first component and/or the second component during the annealing stage.


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