The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Jan. 13, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Jui-Seng Wang, New Taipei, TW;
Yu-Chen Huang, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76883 (2013.01);
Abstract
A method for fabricating a semiconductor structure includes: providing a substrate and a dielectric layer on the substrate; and forming an etching mask on the dielectric layer; and etching the dielectric layer using the etching mask to form at least one opening therein. The etching mask includes: a hard mask layer, a photoresist layer, and a hexamethyldisilazane (HMDS) layer. The photoresist layer is located over the hard mask layer, and the HMDS layer is located between the hard mask layer and the photoresist layer.