The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2023

Filed:

Aug. 17, 2021
Applicant:

Artilux, Inc., Menlo Park, CA (US);

Inventors:

Szu-Lin Cheng, Hsinchu, TW;

Chien-Yu Chen, Zhubei, TW;

Shu-Lu Chen, Zhubei, TW;

Yun-Chung Na, Zhubei, TW;

Ming-Jay Yang, Zhubei, TW;

Han-Din Liu, Sunnyvale, CA (US);

Che-Fu Liang, Zhubei, TW;

Jung-Chin Chiang, Zhubei, TW;

Yen-Cheng Lu, Zhubei, TW;

Yen-Ju Lin, Zhubei, TW;

Assignee:

Artilux, Inc., Menlo Park, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01S 17/894 (2020.01); G01S 17/26 (2020.01); H01L 27/148 (2006.01); G01S 7/481 (2006.01);
U.S. Cl.
CPC ...
G01S 17/894 (2020.01); G01S 7/4814 (2013.01); G01S 7/4816 (2013.01); G01S 17/26 (2020.01); H01L 27/14812 (2013.01); H01L 27/14856 (2013.01);
Abstract

A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×10cm, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.


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