The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Oct. 30, 2020
University of Electronic Science and Technology of China, Chengdu, CN;
Cheng Liu, Chengdu, CN;
Hongyang Zhang, Chengdu, CN;
Qinghui Yang, Chengdu, CN;
Lichuan Jin, Chengdu, CN;
Yuanxun Li, Chengdu, CN;
Huaiwu Zhang, Chengdu, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu, CN;
Abstract
A LiMgSbO-based microwave dielectric ceramic material easy to sinter and with high Q value, and a preparation method thereof are disclosed. A chemical formula of the material is Li(MgZn)SbO, wherein 0.02≤x≤0.08. The preparation method includes: 1) mixing and ball-milling SbOand LiCOaccording to a chemical ratio and then drying, and conducting pre-sintering to obtain a LiSbOphase; and 2) mixing and ball-milling MgO, ZnO and LiSbOpowder according a chemical ratio of Li(MgZn)SbOand then drying, conducting granulation and sieving after adding an adhesive, pressing into a cylindrical body, and sintering the cylindrical body into ceramic in the air at 1325° C. and under normal pressure, wherein a dielectric constant is 7.2-8.5, a quality factor is 51844-97719 GHz, and a temperature coefficient of resonance frequency is −14-1 ppm/° C.