The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Feb. 19, 2020
Applicant:

Ningbo Lumilan Advanced Materials Co., Ltd., Zhejiang Province, CN;

Inventors:

Ting-Wei Wei, Zhejiang Province, CN;

Ye Cai, Zhejiang Province, CN;

Huanda Ding, Zhejiang Province, CN;

Kunshan Xie, Zhejiang Province, CN;

Zhi-Kuan Chen, Zhejiang Province, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/54 (2006.01); C07D 403/04 (2006.01); C07D 403/10 (2006.01); C07D 405/10 (2006.01); C07D 409/10 (2006.01); C07D 491/048 (2006.01); C07D 487/04 (2006.01); C07D 495/04 (2006.01); C07D 401/04 (2006.01); H01L 51/00 (2006.01); C07D 513/04 (2006.01); C07D 239/70 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0072 (2013.01); C07D 239/70 (2013.01); C07D 491/048 (2013.01); C07D 495/04 (2013.01); C07D 513/04 (2013.01); H01L 51/001 (2013.01); H01L 51/5004 (2013.01); H01L 51/5012 (2013.01); H01L 51/5028 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5092 (2013.01); H01L 51/5096 (2013.01); H01L 51/56 (2013.01); H01L 2251/552 (2013.01); H01L 2251/558 (2013.01);
Abstract

The present invention relates to the field of display technologies, and particularly to a fused polycyclic compound, and a preparation method and use thereof. The fused polycyclic compound provided in the present invention has a structure of General Formula IV. The structure of the compound has ambipolarity, and the HOMO level and the LUMO level of the host material are respectively located on different electron donating group and electron withdrawing group, such that the transport of charges and holes in the host material becomes more balanced, thereby expanding the area where holes and electrons are recombined in the light emitting layer, reducing the exciton concentration, preventing the triplet-triplet annihilation of the device, and improving the efficiency of the device.


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