The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Feb. 26, 2021
Applicants:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;
Inventors:
Kazushige Yamamoto, Yokohama Kanagawa, JP;
Mutsuki Yamazaki, Yokohama Kanagawa, JP;
Soichiro Shibasaki, Tokyo, JP;
Yuya Honishi, Saitama Saitama, JP;
Naoyuki Nakagawa, Tokyo, JP;
Yoshiko Hiraoka, Kawasaki Kanagawa, JP;
Assignees:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 31/00 (2006.01); H02S 10/00 (2014.01); H01L 31/0687 (2012.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0687 (2013.01); H01L 31/0323 (2013.01);
Abstract
The photoelectric conversion layer of an embodiment is based on CuO, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.