The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Jun. 16, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sunggil Kim, Yongin-si, KR;

Sungjin Kim, Hwaseong-si, KR;

Seulye Kim, Seoul, KR;

Jung-Hwan Kim, Seoul, KR;

Chan-Hyoung Kim, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 27/11556 (2017.01); G11C 5/06 (2006.01); H01L 27/11582 (2017.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 27/11582 (2013.01);
Abstract

Disclosed are semiconductor memory devices and methods of fabricating the same. A semiconductor memory device includes a stack structure that includes a plurality of electrodes and a plurality of dielectric layers that are alternately stacked on a substrate, a vertical channel structure that penetrates the stack structure, and a conductive pad on the vertical channel structure. The vertical channel structure includes a semiconductor pattern and a vertical dielectric layer between the semiconductor pattern and the electrodes. An upper portion of the semiconductor pattern includes an impurity region that includes a halogen element. The upper portion of the semiconductor pattern is adjacent to the conductive pad.


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