The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Aug. 09, 2022
Applicant:
Raytheon Systems Limited, Glenrothes, GB;
Inventors:
David Trann Clark, Glenrothes, GB;
Robin Forster Thompson, Dunfermline, GB;
Assignee:
Raytheon Systems Limited, Glenrothes, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 27/06 (2006.01); H01L 29/735 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 27/092 (2006.01); H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8213 (2013.01); H01L 27/0605 (2013.01); H01L 27/0623 (2013.01); H01L 27/0635 (2013.01); H01L 29/1008 (2013.01); H01L 29/6625 (2013.01); H01L 29/66068 (2013.01); H01L 29/735 (2013.01); H01L 29/7824 (2013.01); H01L 21/046 (2013.01); H01L 27/0629 (2013.01); H01L 27/082 (2013.01); H01L 27/0922 (2013.01); H01L 29/1608 (2013.01); H01L 29/78 (2013.01); H01L 29/7835 (2013.01);
Abstract
The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.