The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Sep. 18, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Hanhong Chen, Milpitas, CA (US);

Philip A. Kraus, San Jose, CA (US);

Joseph AuBuchon, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/34 (2013.01); C23C 16/45542 (2013.01); H01L 21/0217 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01);
Abstract

A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.


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