The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Oct. 08, 2021
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Satoshi Ito, Eniwa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
G02F 1/134309 (2013.01); G02F 1/13439 (2013.01);
Abstract

In a liquid crystal device, an intermediate refractive index film including a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film is provided between an oriented film formed of a diagonally vapor-deposited film of silicon oxide and an electrode containing ITO. Thus, because there are no interfaces having a large refractive index difference between the oriented film and the electrode, reflection between the oriented film and the electrode can be suppressed. A high density silicon oxide film is formed between the intermediate refractive index film and the oriented film. The high density silicon oxide film is formed by an atomic deposition method, thus is appropriately formed inside a contact hole.


Find Patent Forward Citations

Loading…