The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Mar. 31, 2021
Applicant:

Marvell Asia Pte Ltd., Singapore, SG;

Inventors:

Hong Cai, San Jose, CA (US);

Jie Lin, San Jose, CA (US);

Assignee:

MARVELL ASIA PTE LTD., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/136 (2006.01); G02B 6/122 (2006.01); G02B 6/293 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12007 (2013.01); G02B 6/1228 (2013.01); G02B 6/136 (2013.01); G02B 6/29344 (2013.01);
Abstract

A method for making a multimode interference (MMI) coupler with an arbitrary desired splitting ratio includes forming a thin-film of silicon-nitride material overlying a SOI substrate. The method further includes obtaining geometric parameters of a standard MIMI coupler including a rectangular MMI block and one input port and two output ports in taper shape with one of standard splitting ratios under self-imaging principle which is close to the desired splitting ratio. Additionally, the method includes tunning the input port to an off-center position at front edge of the MMI block. The method further includes making a first output port to a first off-center position flushing with a side edge of the MMI block, adjusting a second output port to a second off-center position. The method includes tunning the MMI block to obtain optimized geometric parameters for approaching the selected arbitrary splitting ratio, and etching the thin-film of silicon-nitride material.


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