The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Dec. 03, 2021
Applicant:
Iqm Finland Oy, Espoo, FI;
Inventors:
Tianyi Li, Espoo, FI;
Wei Liu, Espoo, FI;
Manjunath Ramachandrappa Venkatesh, Espoo, FI;
Hasnain Ahmad, Espoo, FI;
Kok Wai Chan, Espoo, FI;
Kuan Yen Tan, Espoo, FI;
Assignee:
IQM Finland Oy, Espoo, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01); H01L 39/22 (2006.01); H01L 39/02 (2006.01); G06N 10/00 (2022.01); H01L 27/18 (2006.01); G06N 10/40 (2022.01);
U.S. Cl.
CPC ...
H01L 39/2493 (2013.01); G06N 10/00 (2019.01); H01L 27/18 (2013.01); H01L 39/025 (2013.01); H01L 39/223 (2013.01); G06N 10/40 (2022.01);
Abstract
The present invention relates to the manufacture of Josephson junctions. Such Josephson junctions may be suitable for use in qubits. High-quality, potentially monocrystalline, electrode and dielectric layers are formed using blanket deposition. Subsequently, the structure of one of more Josephson junctions is formed using multi-photon lithography to create openings in a resist followed by etching the electrode and dielectric layers.