The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2023

Filed:

Mar. 11, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Yves Martin, Ossining, NY (US);

Jason S. Orcutt, Katonah, NY (US);

Antoine Hervier, New York, NY (US);

Martin O. Sandberg, Ossining, NY (US);

Harry Jonathon Mamin, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/22 (2006.01); H01L 29/66 (2006.01); H01L 39/02 (2006.01); H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
H01L 39/223 (2013.01); H01L 29/66977 (2013.01); H01L 39/025 (2013.01); H01L 39/2493 (2013.01);
Abstract

Circuits and methods of operation that can facilitate reducing surface losses for quantum devices are provided. In one example, a quantum device can comprise a dielectric layer, a first electrode, and a second electrode. The dielectric layer can comprise a recess formed in a surface of the dielectric layer that reduces a thickness of the dielectric layer from a first thickness external to a footprint of the recess to a second thickness within the footprint of the recess. The second thickness can be less than the first thickness. The first electrode can be positioned within the footprint of the recess. The second electrode can be electrically isolated from the first electrode by the dielectric layer. The first and second electrodes can be positioned on opposing surfaces of the dielectric layer.


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